N沟道800 V、1.45 Ohm典型值、4 A MDmesh K5功率MOSFET，PowerFLAT 5x6 VHV封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n • Industry’s lowest RDS(on) x area \n• Ultra-low gate charge \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 1.50(ohm) typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件：723.78 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：904.44 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：820.1 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：313.26 Kbytes 页数：2 Pages

ISC

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