N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness;

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汽车级N沟道40 V、1.3 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 专为汽车应用设计并通过AEC-Q101认证 \n• 处于市面上最低的RDS(on) 行列 \n• 出色的品质因数（FoM） \n• 较低的 Crss/Ciss 比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力 \n• 侧面可焊性封装;

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Automotive-grade N-channel 40 V, 1.3 m typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Description This N-channel Power MOSFET utilizes

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STMICROELECTRONICS

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QFN

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上传：深圳市向鸿伟业电子有限公司

STM
DFN5X6

STM

信盛

上传：深圳市金芯世纪电子有限公司