N沟道650 V、0.215 Ohm典型值、15 A MDmesh M5功率MOSFET，PowerFLAT 5x6 HV封装

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

Very low intrinsic capacitance

文件：1.54071 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：295.69 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

文件：954.65 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：373.58 Kbytes 页数：2 Pages

ISC

无锡固电