汽车级双路N沟道40 V、8 mOhm典型值、15 A STripFET F5功率MOSFET，PowerFLAT 5x6双岛封装

This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ F5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. • Designed for automotive applications and AEC-Q101 qualified \n• Extremely low RDS(on) \n• Very low gate charge \n• Low gate drive power loss \n• Wettable flank package;

ST

意法半导体

Dual N-channel 40 V, 8 m廓, 15 A PowerFLAT??5x6) double island, STripFET??V Power MOSFET

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STMICROELECTRONICS

意法半导体

ST
QFN

ST

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STM
DFN5X6

STM

信盛

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ST
DFN5X6

ST

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