N沟道650 V、0.365 Ohm典型值、6.5 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：642.54 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.37 ??typ.,10 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

文件：551.01 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.37 ??typ.,10 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

文件：551.01 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体