N-Channel Junction FET

文件：343.1 Kbytes 页数：5 Pages

AUK

N-Channel Junction FET

Kodenshi-AUK

SILICON N-CHANNEL RF POWER MOSFET

DESCRIPTION: The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. FEATURES: • PG = 12 dB min. at 0.5 W/ 860 MHz • Common Emitter • Omnigold™ Metallization System

文件：18.58 Kbytes 页数：1 Pages

ASI

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

文件：94.42 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

文件：94.42 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉