STJ828M规格书应用电路供应商报价瑞萨AUK-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STJ828M	文件：277.14 Kbytes Page：4 Pages	P-Channel Enhancement-Mode MOSFET 文件：277.14 Kbytes 页数：4 Pages	AUK	AUK
STJ828M	文件：300 bytes Page：1 Pages	P-Channel Enhancement-Mode MOSFET	Kodenshi-AUK	Kodenshi-AUK
STJ828UF	文件：300.96 Kbytes Page：4 Pages	P-Channel Enhancement-Mode MOSFET 文件：300.96 Kbytes 页数：4 Pages	AUK	AUK
UPA828	文件：92.61 Kbytes Page：20 Pages	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184) 文件：92.61 Kbytes 页数：20 Pages	NEC 瑞萨	NEC
UPA828TF	文件：92.61 Kbytes Page：20 Pages	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184) 文件：92.61 Kbytes 页数：20 Pages	NEC 瑞萨	NEC

更多STJ828M供应商更新时间2026-4-2 15:30:00