N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET，I2PAK封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in an I짼PAK package

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STMICROELECTRONICS

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N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220 package

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STMICROELECTRONICS

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Zener-protected

文件：704.36 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Switching applications

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STMICROELECTRONICS

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