包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 60V H2PAK-2

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n • Designed for automotive applications and AEC-Q101 qualified\n• Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

ST

意法半导体

High avalanche ruggedness

文件：486.89 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

TO-263

ST

上传：深圳市佳斯泰科技有限公司

BGA

ST

上传：深圳市凯睿晟科技有限公司