Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n • Designed for automotive applications and AEC-Q101 qualified\n• Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

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High avalanche ruggedness

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STMICROELECTRONICS

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TO-263

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BGA

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BGA

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