Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on)in all packages.\n • Designed for automotive applications and AEC-Q101 qualified\n• Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

ST

意法半导体

Very low on-resistance

文件：594.89 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

ST
TO-263

ST

上传：深圳市纳立科技有限公司

ST
TO263-7

ST

上传：深圳市力拓辉电子有限公司

ST
TO-263

ST

上传：深圳市佳斯泰科技有限公司