Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos • Maximum junction temperature: TJ= 175 °C\n• Tail-less switching off\n• VCE(sat)= 1.85 V (typ.) @ IC= 80 A• Tight parameters distribution\n• Safe paralleling\n• Low thermal resistance;

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意法半导体

丝印：GWT80V60F；Package：TO-3P；Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

文件：1.64813 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 120A 469W TO-3P

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

文件：1.64813 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.60316 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

文件：1.64813 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体