STGWT60H65F

丝印：G60H65F；Package：TO-3P；60 A, 650 V field stop trench gate IGBT

Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching

STGWT60H65FB

650 V、60 A高速沟槽栅场截止HB系列IGBT; • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• VCE(sat)= 1.6 V (typ.) @ IC= 60 A \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance;

This device is an IGBT developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.\n\n

STGWT60H65FB

Low thermal resistance

STGWT60H65FB

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 80A 375W TO3P-3L

G60H65DFB

Trenchgatefield-stop650V,60AhighspeedHBseriesIGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

STGW60H65DF

60A,650VfieldstoptrenchgateIGBTwithveryfastdiode

STGW60H65DFB

Lowthermalresistance

STGW60H65DFB

Trenchgatefield-stop650V,60AhighspeedHBseriesIGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

STGW60H65DRF

60A,650VfieldstoptrenchgateIGBTwithUltrafastdiode

STGW60H65F

60A,650VfieldstoptrenchgateIGBT