650 V、40 A高速沟槽栅场截止HB系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A \n• Tight parameter distribution \n• Safe paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Ve;

ST

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 80A 283W TO3P-3L

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：1.08307 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：975.07 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：975.07 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：1.08307 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体