Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：975.07 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：975.07 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：1.08307 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance

文件：503.29 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体