600 V、30 A高速沟槽栅场截止HB系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A \n• Tight parameter distribution \n• Safe paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• V;

ST

意法半导体

丝印：GWT30H60DFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency convert

文件：1.43779 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 260W TO3PL

STMICROELECTRONICS

意法半导体

Avalanche rated

文件：281.01 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Avalanche rated

文件：281.01 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Avalanche rated

文件：281.01 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体