沟槽栅场截止IGBT，M系列，650 V、50 A，低损耗

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe • Maximum junction temperature: TJ = 175 °C \n• 6 μs of minimum short-circuit withstand time \n• VCE(sat) = 1.65 V (typ.) @ IC = 50 A \n• Tight parameter distribution \n• Safer paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Soft- and fast-recovery antiparall;

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意法半导体

Trench gate field-stop IGBT, M series 650 V, 50 A low loss

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STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT M SE

STMICROELECTRONICS

意法半导体

Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe • AEC-Q101 qualified \n• Maximum junction temperature: TJ = 175 °C \n• Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A \n• Minimized tail current \n• Tight parameter distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast-recovery antiparallel diode;

ST

意法半导体