Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the H series

of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of high

switching frequency converters. Moreover, a

slightly positive VCE(sat) temperature coefficient

and very tight parameter distribution result in

safer paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 2.1 V (typ.) @ IC = 25 A

• 5 µs minimum short circuit withstand time at

TJ=150 °C

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

Applications

• Uninterruptible power supply

• Welding machines

• Photovoltaic inverters

• Power factor correction

• High frequency converters

STGW25H120F2属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGW25H120F2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。