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STGDL6NC60DI

6 A, 600 V hyper fast IGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGDL6NC60DIT4

6 A, 600 V hyper fast IGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGDL6NC60DIT4

包装:管件 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 13A 50W DPAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GB6NC60H

N-channel600V-7A-D2PAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GB6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GD6NC60H

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GD6NC60HD

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GF6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P6NC60

N-CHANNEL600V-1ohm-6ATO-220/TO-220FP/I2PAKPowerMESH?줚IMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P6NC60FP

N-CHANNEL600V-1ohm-6ATO-220/TO-220FP/I2PAKPowerMESH?줚IMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB6NC60

N-CHANNEL600V-1ohm-6ATO-220/TO-220FP/I2PAKPowerMESH?줚IMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB6NC60H

N-channel600V-7A-D2PAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB6NC60HD

N-channel600V-7A-I2PAK/D2PAK/TO-220/TO-220FPVeryfastPowerMESH??IGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGBL6NC60D

N-channel600V-6A-DPAK/D2PAK/TO-220/TO-220FPHyperfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGBL6NC60D

600V-6AhyperfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGBL6NC60DI

6A,600VhyperfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGD6NC60H

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGD6NC60HD

N-CHANNEL6A-600VDPAKVeryFastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STGDL6NC60DI

  • 功能描述:

    IGBT 晶体管 600V 6A hyper fast IGBT

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST全系列
22+23+
DPAK
26250
绝对原装正品全新进口深圳现货
询价
ST
1926+
DPAK
6852
只做原装正品现货!或订货假一赔十!
询价
ST
23+
DPAK
35400
全新原装真实库存含13点增值税票!
询价
STM原厂目录
23+
DPAK
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
ST/意法
23+
DPAK
10000
公司只做原装正品
询价
ST
22+
DPAK
6000
十年配单,只做原装
询价
ST
15+
DPAK
500
进口原装现货假一赔万力挺实单
询价
ST
DPAK
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST/意法
22+
DPAK
99692
终端免费提供样品 可开13%增值税发票
询价
ST/意法
22+
DPAK
99692
询价
更多STGDL6NC60DI供应商 更新时间2024-6-18 16:50:00