Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos • Maximum junction temperature: TJ= 175 °C\n• Tail-less switching off\n• VCE(sat)= 1.85 V (typ.) @ IC= 30 A• Tight parameters distribution\n• Safe paralleling\n• Low thermal resistance;

ST

意法半导体

Low thermal resistance

文件：1.45343 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

文件：1.31925 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

文件：1.47767 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.91768 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体