N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT

文件：481.62 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT

文件：481.62 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

汽车级10 A、410 V内部钳制IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, PowerMESH™ with an overall outstanding performance. The built-in collector-gate Zener exhibits a very precise active clamping while the gate-emitter Zener supplies • AEC-Q101 qualified \n• Low threshold voltage \n• Low on-voltage drop \n• Low gate charge \n• High current capability \n• High voltage clamping feature;

ST

意法半导体

N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT

ST

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 440V 20A 150W D2PAK

STMICROELECTRONICS

意法半导体