Galvanically isolated 4 A single gate driver for SiC MOSFETs

Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @25°C • dV/dt transient immunity ±100 V/ns in full temperature range • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP

文件：716.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Galvanically isolated 4 A single gate driver for SiC MOSFETs

Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @25°C • dV/dt transient immunity ±100 V/ns in full temperature range • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP

文件：716.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Galvanically isolated 4 A single gate driver for SiC MOSFETs

The STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.\n\n The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power appli • High voltage rail up to 1200 V \n• Driver current capability: 4 A sink/source @25°C \n• dV/dt transient immunity ±100 V/ns in full temperature range \n• Overall input-output propagation delay: 75 ns \n• Separate sink and source option for easy gate driving configuration \n• 4 A Miller CLAMP dedica;

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意法半导体

Galvanically isolated 4 A single gate driver for SiC MOSFETs

The STGAP2SICSAN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.\n\n The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications • AEC-Q100 qualified \n• High voltage rail up to 1700 V \n• Driver current capability: 4 A sink/source @25°C \n• 100 V/ns Common Mode Transient Immunity (CMTI) \n• Overall input-output propagation delay: 45 ns \n• Rail-to-rail outputs \n• 4 A Miller CLAMP dedicated pin \n• UVLO function• Gate drivin;

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意法半导体

Galvanically isolated 4 A single gate driver for SiC MOSFETs

STGAP2SICSN是在栅极驱动通道与低压控制和接口电路之间提供6 kV电隔离的单栅极驱动器。\n\n 该栅极驱动器具有4 A能力和轨到轨输出，使得该器件还适合工业应用中的功率转换、电机驱动逆变器等高功率应用。该设备有两种不同的配置。具有独立输出引脚的配置可以使用栅极电阻独立优化导通和关断。具有单输出引脚和米勒钳位功能的配置可防止半桥拓扑中快速换向期间的栅极峰值。两种配置均可为外部组件提供高度灵活性和减少外部材料清单。\n\n 该器件集成了保护功能：UVLO（其值已针对SiC MOSFET进行了优化）和热关断，便于设计高度可靠的系统。双输入引脚允许选择信号极性控制和实现HW联锁保护，以避免在 • 高压导轨达1700 V \n• 驱动器电流能力：4 A灌/拉@25 °C \n• dV/dt瞬态抗扰性 ±100 V/ns（整个温度范围） \n• 总输入 - 输出传播延迟：75 ns \n• 独立的电流拉灌选项，轻松实现栅极驱动配置 \n• 4A专用密勒钳位引脚 \n• UVLO功能• 栅极驱动电压高达26 V \n• 具有迟滞的3.3 V，5 V TTL / CMOS输入 \n• 温度关闭保护 \n• 待机功能 \n• 4.8 kVPK隔离 \n• 窄体SO-8;

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意法半导体