N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a I2PAKFP package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Fully insulated and low profile package with increased creepage path from pin toheatsink plate\nIndustry’s lowest R\nDS(on) x area\nIndustry’s best FoM (figure of merit)\nUltra-low gate charge\n100% avalanche tested\nZener-protected;

ST

意法半导体

丝印：5N80K5；Package：IPAKFP；N-channel 800 V, 1.50 廓 typ., 4 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

文件：723.21 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.50(ohm) typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件：723.78 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：904.44 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：820.1 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：313.26 Kbytes 页数：2 Pages

ISC

无锡固电