N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks toits strip layout and an improved vertical structure, the device exhibits lowon-resistance and optimized switching characteristics, rendering it suitable for themost demanding high efficiency converters.\n T • Extremely low gate charge\n• Excellent output capacitance (COSS) profile\n• 100% avalanche tested• Zener-protected\n• Wide creepage distance of 4.25 mm between the pins;

ST

意法半导体

Extremely low gate charge

文件：674.18 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.13696 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.35 typ., 11 A MDmeshTM M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features  Extremely low gate charge  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved

文件：655.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is

文件：1.05303 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体