N沟道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET，TO-220FP超窄引线封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Lower RDS(on) x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 0.35 typ., 11 A MDmeshTM M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features  Extremely low gate charge  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved

文件：655.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V TO-220FP

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is

文件：1.05303 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.27392 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10773 Mbytes 页数：10 Pages

VBSEMI

微碧半导体