N-channel 1050 V, 0.90 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP wide creepage package

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n • Industry's lowest RDS(on) * area \n• Ultra low gate charge \n• Zener-protected \n• Wide creepage distance of 4.25 mm between the pins;

ST

意法半导体

TO-3PF

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上传：深圳市联世界科技有限公司

TO-247F

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上传：深圳德田科技有限公司

TO-3PF

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上传：深圳市励创源科技有限公司

SOT23-6

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上传：深圳市创雅恩科技有限公司