N-channel 600 V, 0.63 Ohm, 6.5 A MDmesh(TM) II Power MOSFET in a TO-220FP narrow leads package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested\n• Low input capacitance and gate charge• Low gate input resistance;

ST

意法半导体

TO-3PF

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上传：深圳市联世界科技有限公司

TO-247F

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上传：深圳德田科技有限公司

TO-3PF

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上传：深圳市励创源科技有限公司

SOT23-6

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上传：深圳市创雅恩科技有限公司