STF46N60M6

N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220FP package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STF46N60M6

N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220FP package; • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.\n\n

STP46N60M6

N-channel600V,68mtyp.,36A,MDmeshM6PowerMOSFETinaTO‑220package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof