首页 >STF3N80K5贴片三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
24+ |
TO-220F |
60000 |
全新原装现货 |
询价 | ||
ST/进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
STMicro. |
23+ |
TO-220FP |
7750 |
全新原装优势 |
询价 | ||
ST |
23+ |
TO-220F |
10000 |
原装正品,假一罚十 |
询价 | ||
DISCRETE |
50 |
STM |
60400 |
询价 | |||
ST |
24+ |
TO-220-3全封装 |
976 |
原装现货假一罚十 |
询价 | ||
ST |
24+ |
TO-220-3 |
980 |
询价 | |||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ST |
23+ |
原盒原包装 |
33000 |
全新原装假一赔十 |
询价 |
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