N沟道600 V、165 mOhm典型值、18 A MDmesh DM6功率MOSFET，TO-220FP封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

丝印：26N60DM6；Package：TO-220FP；N-channel 600 V, 165 m廓 typ., 18 A, MDmesh DM6 Power MOSFET in a TO??20FP package

文件：280.58 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 600 V, 175 m廓 typ., 15 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

文件：359.58 Kbytes 页数：14 Pages

STMICROELECTRONICS

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nullN-channel 600 V, 165 m廓 typ., 18 A, MDmesh DM6 Power MOSFET in a TO??20 package

文件：278.66 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体