N-channel 600 V, 0.230 typ., 13 A, MDmesh™ M2 EP Power MOSFET in a TO-220FP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to

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STMICROELECTRONICS

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N沟道600 V、0.230 Ohm典型值、13 A MDmesh M2 EP功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• Very low turn-off switching losses \n• 100% avalanche tested \n• Zener-protected;

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N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

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N-channel 600 V, 0.230 typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-220 package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to

文件：276.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-247 package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：275.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体