STF18NM80中文资料N沟道800 V、0.25 Ohm、17 A MDmesh(TM) 功率MOSFET,TO-220FP封装数据手册ST规格书
STF18NM80规格书详情
描述 Description
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
特性 Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
技术参数
- 制造商编号
:STF18NM80
- 生产厂家
:ST
- Package
:TO-220FP
- Grade
:Industrial
- VDSS(V)
:800
- RDS(on)_max(@ VGS=10V)(Ω)
:0.295
- Drain Current (Dc)_max(A)
:17
- PTOT_max(W)
:40
- Qg_typ(nC)
:70
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
2200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST/意法半导体 |
24+ |
TO-220-3 |
16900 |
原装,正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ST专家 |
TO-220FP |
23500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
21+ |
TO-220-3 |
3947 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
ST |
23+ |
NA |
3918 |
专做原装正品,假一罚百! |
询价 | ||
ST专家 |
25+23+ |
TO-220FP |
29265 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
询价 |