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STF18NM60ND数据手册ST中文资料规格书
STF18NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
The worldwide best R
DS(on)* area amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STF18NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Rail/Tube
- 功能描述：
MOSFET N-CH 600V 13A TO-220FP
- 功能描述：
MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
2511 |
TO-220-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
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询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST |
23+ |
TO2203 |
8000 |
只做原装现货 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
16900 |
原装现货,实单价优 |
询价 | ||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
22+ |
NA |
3000 |
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询价 |
