首页 >STF15NM65NMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-channel650V,0.35廓typ.,12AMDmesh??IIPowerMOSFETsinTO-220FPandI짼PAKFPpackages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel650V,0.35廓typ.,12AMDmesh??IIPowerMOSFETinaTO-220FPultranarrowleadspackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor •FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage-:VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247SecondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247SecondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247SecondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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