STE38NB50F中文资料意法半导体数据手册PDF规格书

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.11 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100 AVALANCHE TESTED

■ LOW INTRINSIC CAPACITANCE

■ GATE CHARGE MINIMIZED

■ REDUCED VOLTAGE SPREAD

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLY (SMPS)

■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE