N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：89.49 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

ST

意法半导体

N - CHANNEL 500V - 0.11 Q - 38A - ISOTOP

N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET ■ TYPICAL RDS(on) = 0.11 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HI

文件：382.83 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：280.94 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体