N沟道650 V、0.012 Ohm典型值、143 A MDmesh M5功率MOSFET，ISOTOP封装

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and super • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

Low gate charge and input capacitance

文件：820.59 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.012 廓 typ., 138 A, MDmesh??V Power MOSFET in Max247 package

文件：788.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.012 廓 typ., 138 A, MDmesh??V Power MOSFET in Max247 package

文件：788.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体