丝印：LED602；Package：DPAK；N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting application Description These Power MOSFETs boast extremely low onresistance, superior d

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Ultrafast recovery diode

Description Dual center tap diode suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB and TO-22FPAB, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection. Features and benefits ■ Suited for

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Automotive ultrafast recovery diode

Features  AEC-Q101 qualified  Suited for SMPS  Low losses  Low forward and reverse recovery time  High surge current capability  High junction temperature  PPAP capable

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STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description Dual center tap diode suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB and TO-22FPAB, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection. Features and benefits ■ Suited for

文件：111.89 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体