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STD9NM40N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STD9NM40N

N-channel400V,0.73廓typ.,5.6AMDmesh??IIPowerMOSFETinDPAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP9NM40N

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=22.4A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=790mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP9NM40N

N-channel400V,0.73廓typ.,5.6AMDmesh??IIPowerMOSFETinDPAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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