首页 >STD95N03L>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=95A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelLogicLevelPWMOptimizedPowerMOSFET GeneralDescription ThisdeviceemploysanewadvancedtrenchMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequen | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-channelTrenchMOStransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Lowon-stateresistance ■Fastswitching. Applications ■HighfrequencycomputermotherboardDCtoDCconverters | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES DrainCurrent-ID=75A@TC=25℃ DrainSourceVoltage-VDSS=25V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHD95N03LTinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching. Applications ■HighfrequencycomputermotherboardDCtoDCconver | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Lowon-stateresistance ■Fastswitching. Applications ■HighfrequencycomputermotherboardDCtoDCconverters | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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