N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

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STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY™ MOSFET

ST

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N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：319.97 Kbytes 页数：8 Pages

STMICROELECTRONICS

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N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.\n • Extremely high dv/dt capability\n• Very low intrinsic capacitance• Gate charge minimized;

ST

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