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STI70N10F4

N-channel100V,0.015Ω,60A,STripFET™DeepGATE™PowerMOSFETinI2PAK

Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET™DeepGATE™PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP70N10F4

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STP70N10F4

N-channel100V,0.015廓,60A,STripFET??DeepGATE??PowerMOSFETinTO-220,DPAK,TO-247,D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP70N10F4

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0195Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STW70N10F4

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0195Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STW70N10F4

N-channel100V,0.015廓,60A,STripFET??DeepGATE??PowerMOSFETinTO-220,DPAK,TO-247,D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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