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STF6A80

Bi-DirectionalTriodeThyristor

semiWell

SemiWell Semiconductor

T6A80

6.0AStandardRectifier

6.0AStandardRectifier Features •LowForwardVoltageDrop •LowReverseLeakage •HighSurgeCurrentCapability •HighReliability •HighTemperatureSolderingGuaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

TAITRON

TAITRON Components Incorporated

T6A80G

6.0AGlassPassivatedRectifier

6.0AGlassPassivatedRectifier Features •LowForwardVoltageDrop •HighCurrentCapability •HighSurgeCurrentCapability •HighReliability •HighTemperatureSolderingGuaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

TAITRON

TAITRON Components Incorporated

T6A80L

6.0AmpSiliconRectifiers

Features •Lowforwardvoltagedrop •highcurrentcapability •Highforwardsurgecurrentcapability •Highreliability •Hightemperaturesolderingguaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

TAITRON

TAITRON Components Incorporated

T6A80L

6.0AMPSILICONRECTIFIER

[TAITRON] Features •Lowforwardvoltagedrop •highcurrentcapability •Highforwardsurgecurrentcapability •Highreliability •Hightemperaturesolderingguaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

TK6A80E

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.35Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.6mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK6A80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

VSIB6A80

Single-PhaseSingleIn-LineBridgeRectifiers

FEATURES •ULrecognitionfilenumberE54214 •Thinsinglein-linepackage •Glasspassivatedchipjunction •Highsurgecurrentcapability •Highcasedielectricstrengthof1500VRMS •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/EC andWEEE2002/96/EC TYPICALAPP

VishayVishay Siliconix

威世科技威世科技半导体

VSIB6A80

Single-PhaseSingleIn-LineBridgeRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

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