STD60N55

N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET

Description Thisn-channelenhancementmodePowerMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™“strip-basedprocesswithlesscriticalaligmentstepsandthereforearemarkablemanufacturingreproducibility.Theresultingtransistorshowsextremelyhighpackin

STD60N55-1

N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET

Description Thisn-channelenhancementmodePowerMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™“strip-basedprocesswithlesscriticalaligmentstepsandthereforearemarkablemanufacturingreproducibility.Theresultingtransistorshowsextremelyhighpackin

STD60N55F3

N-channel 55 V, 6.5 m廓, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET??III Power MOSFET

STD60N55F3

N-Channel 60 V (D-S) 175 째C MOSFET

CEW60N55S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 550V,60A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. RoHScompliant.

IXFK60N55

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

IXFX60N55

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve