Automotive-grade N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the co

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STMICROELECTRONICS

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汽车级N沟道500 V、0.7 Ohm典型值、7.5 A MDmesh功率MOSFET，DPAK封装

• AEC-Q101 qualified \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

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N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：463.65 Kbytes 页数：10 Pages

STMICROELECTRONICS

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N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：463.65 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体