首页 >STD5N52K3MOSFET或IGBT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel525V,1.2廓,4.4ASuperMESH3??PowerMOSFETD짼PAK,DPAK,TO-220FP,TO-220,IPAK | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel525V,1.2廓,4.4ASuperMESH3??PowerMOSFETD짼PAK,DPAK,TO-220FP,TO-220,IPAK | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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