N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：620.58 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 3廓 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH??MOSFET

文件：546.52 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：620.58 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 3廓 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH??MOSFET

文件：546.52 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 3廓 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH??MOSFET

文件：546.52 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a DPAK package

所有功能Extremely high dv/dt capabilityGate charge minimized100% avalanche testedVery good manufacturing repeatibilityVery low intrinsic capacitances • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very good manufacturing repeatibility \n• Very low intrinsic capacitances;

ST

意法半导体

N沟道800 V、2.7 Ohm典型值、3 A SuperMESH功率MOSFET，IPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a DPAK package

ST

意法半导体