首页 >STD4NA40MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.7Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAGEINTUBE(SUFFIX-1) ■SURFACE-MOUNTINGDPAK(TO-252)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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