首页 >STD45N10F7MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Ultralowon-resistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor Features LowRDS(on)&FOM Extremelylowswitchingloss ExcellentstabilityanduniformityorInvertors Applications Consumerelectronicpowersupply Motorcontrol Synchronous-rectification IsolatedDC Synchronous-rectificationapplication | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Automotive-gradeN-channel100V,20mΩtyp.,18A,STripFET™F7PowerMOSFETinaPowerFLAT™5x6package Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofm | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤18mΩ •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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