P-channel -30 V, 12 mOhm typ., -40 A STripFET H6 Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology witha new trench gate structure. The resulting Power MOSFET exhibits very lowRDS(on) in all packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

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丝印：40P3LLH6；Package：DPAK；P-channel -30 V, 12 m廓 typ., -40 A STripFET??H6 Power MOSFET in a DPAK package

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STMICROELECTRONICS

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